• 专利附录
  • 专利说明
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    • 专利摘要:
    The present invention relates to a method and apparatus for polishing a surface of a semiconductor wafer. The wafer is held in place by the tool head and contacted by the polishing pad. A table is provided on the position where the polishing pad is fixedly attached, both of which move in a direction parallel to the surface of the polished wafer. The controller can control the movement of the table along a given polishing pattern and maintain a constant speed between the wafer and the polishing pad. The tool head includes a retaining ring and a circular ring positioned about the outer edge of the platen that resists lateral forces on the wafer caused by engagement of the polishing surface with the face of the wafer. The adjustable coupling is mounted to the platen and the ring, and the polishing of the position of the retaining ring is not only rigidly supported but also serves to adjust the positioning of the ring height relative to the face of the wafer. The flexible disk is fixedly mounted between the support post and the platen and positioned parallel to the face of the platen. The flexible disk is adapted to transmit force between the platen and the post in a direction parallel to the face of the platen and to prevent rotation of the platen about the axis of the support post.
    公开号:KR19990014896A
    申请号:KR1019970708241
    申请日:1996-05-17
    公开日:1999-02-25
    发明作者:호시자키존에이.；윌리암스로저오.；불러제임즈디.；라이켈찰즈에이.；할리우드윌리암케이.；드제우스리차드；리로렌스엘.
    申请人:라인 브루스；익스클루시브디자인컴파니인코퍼레이티드；
    IPC主号:
    专利说明:

    Improvement method and apparatus for chemical machine polishing
    As part of the manufacturing process of the semiconductor device, the semiconductor wafer is polished by CMP. The planarity of patterned and unpatterned wafers and the uniform removal of material therefrom are important for wafer throughput. Typically, the wafer to be polished is mounted on a toolhead that holds the wafer using vacuum suction or other means to contact the backside of the wafer and centers the wafer on the toolhead using retaining lips or rings around the edge of the wafer. do.
    The front of the wafer, ie the surface to be polished, is in contact with an abrasive material such as a polishing pad or polishing strip. This polishing pad or strip may have sprayed free abrasive fluid, have fixed abrasive particles, or have scattered abrasive particles.
    An ideal wafer polishing process can be described by Preston's equation, ie R = Kp × P × V. Where Kp is a depletion function (polishing pad roughness and elasticity, surface chemistry and abrasiveness, and contact area), P is the applied pressure between the wafer and the polishing pad, and V is the relative velocity between the wafer and the polishing pad. . As a result, the above CMP process must have a constant cutting speed over the entire wafer surface, a constant pressure between the polishing pad and the wafer, and a constant polishing pad roughness, elasticity, area and abrasiveness. In addition, control of temperature and Ph is important and the relative direction of pad / wafer speed must be disorderly distributed over the entire wafer surface.
    Modern CMP machines do not produce a constant velocity distribution across the entire wafer surface that is required for uniform material removal and good flatness. One common type of wafer polishing apparatus is the CMP Model 372M made by Westtech Systems Incorporated. As simply shown in FIG. 1, the wafer 100 is held by a toolhead 102 that rotates about the axis of the wafer. Large circular polishing pad 104 is rotated in contact with the rotating wafer and the tool head. The rotating wafer is in contact with a larger rotary polishing pad away from the center of the polishing pad. Thus, in the Westtech device, the relative motion between the wafer and the polishing pad has two components, one due to the rotating wafer and the other due to the polishing pad.
    Numerous disadvantages result from the relative motion between the polishing pad and the wafer in the Westtech apparatus. According to the Preston equation, the rate at which material is removed from a given point on the wafer is proportional to the relative speed between that point and the polishing pad. In the Westtech device, different points on the wafer exhibit different relative polishing pad speeds, resulting in different removal rates. The nonuniform relative speed causes the speed of the center of the rotating source to be smaller than the speed of the outer surface of the circle. For example, the center of the rotating wafer exhibits a constant speed uniquely associated with the rotating polishing pad, while the outer portion of the wafer represents a speed that is a combination of the rotating tool head and the rotating polishing pad.
    Not only does the Westtech device exhibit non-uniform velocity at different points on the wafer at any point in time, but also the speed of points far from the center fluctuates excessively. The constant rate is lower than the variable rate because the removal rate and other factors required to achieve a smooth finish are very easily controlled. For example, with the Westtech system, points distant from the center of the wafer are alternately high and low speeds. At low speeds, the abrasive material may dent or scratch the surface of the wafer resulting in an unsmooth surface.
    Another related device is a polishing machine for polishing a semiconductor wafer containing a magnetic read-light head disclosed in US Pat. No. 5,335,453 to Valdi et al. With this machine, the semiconductor wafer is held by a support head which is moved in circular deformation motion by the eccentric arm. The wafer is polished by contacting the abrasive strips advancing in one direction. The relative motion between the wafer and the abrasive strip is a combination of the circular motion of the wafer and the linear motion of the forward polishing strip. The resulting relative motion is a circular forward motion. As used herein, forward refers to the motion in the plane of the axis perpendicular to the plane where circular motion occurs around it.
    The forward-polishing polishing pattern provided by this device provides a more uniform speed so that different points on the wafer exhibit similar speeds at a given time, while these speeds are still not constant. If the rotation of the eccentric arm is maintained at a constant angular velocity, the forward relative motion causes a variable speed. The net relative speed is low when the wafer rotates away from the forward direction and the net relative speed is high when the wafer rotates with the forward direction.
    Moreover, this apparatus has the disadvantage that it is not possible to provide an optional polishing pattern. Since this support head is mounted on the rotary eccentric arm, the wafer is only polished by moving in a circle. Non-circular polishing patterns are desirable for several reasons.
    One reason is that it provides more uniform wear of the polishing pad. Non-uniform wear of the polishing pad results in a non-uniform removal rate of the wafer material since the heavier wear portion of the polishing pad removes the material at a lower rate. Non-uniform wear should be advanced at a faster rate or changed more frequently to avoid the pads first using portions of the worn pad.
    The relative polishing movement of the circle advancing straight results in the center of the abrasive strip with more worn portions than the outer edges. This is because more time is spent at the center of the pad than at the outer edges. The more time the wafer spends on any part of the abrasive strip, the more the abrasive strip wears.
    Another disadvantage of the circular pattern is that the spinning of the wafer inside the tool head is not controlled. The force from the polishing motion in continuous circular motion causes the wafer to spin or rotate in one direction with respect to the toolhead.
    Another disadvantage of merely providing a circular pattern is that the phase of the wafer surface cannot be well adapted to the circular polishing pattern. The preliminary polishing phase of the surface of the wafer may be patterned due to the process. The phase of each surface is optimally flattened by some polishing pattern that cannot always be circular. Thus, providing this capability to custom polishing patterns is desirable because polishing different surface phases are optimized.
    Another disadvantage with the system is that it is difficult or impossible to polish selected portions of the wafer using specific portions of the polishing pad. For example, if only the movement provided by the polishing system is of constant radius when the aggressive polishing zone is presented on the polishing pad, then the zone may be selectively used to increase the removal rate on any portion of the wafer. It is difficult.
    Another disadvantage with the system is that the wafer moving in a particular direction has a higher removal rate for the side and leading edge of the wafer. Conventional systems that only provide a polishing pattern cannot be easily made to eliminate the removal rate at the edges due to this practice. Circular motion provides a constant variable cutting direction resulting in a removal rate from all edges. However, conventional systems cannot be programmed, allowing more area to be selectively polished by spending more travel time in one direction than the other.
    As described above, Preston's equation describes an ideal process, but does not suggest several factors related to how the wafer can be expressed in terms of polishing media and chemistry. Several CMP machine planarizations currently available lead to wafer support failures. This abnormality relates to factors that cannot be explained by Preston's equation.
    For example, with several available CMP machines it has been found that the removal rate of material is large near the edge of the wafer. The shape of the platen (which holds the wafer against the polishing medium) and the relationship between the platen and the retaining ring (which centers the wafer on the platen) are important for final wafer planarization.
    One attempt to address some of the problems not explained by Preston's equation is disclosed in US Pat. No. 5,205,082 to Sherdon et al. Disclosed is an attempt to control the relationship between the platen, the ring and the pad by tying the platen and the ring together through a flexible diaphragm. However, by letting the ring rise with respect to the platen, the ring can be upset by changes in polishing pad flatness, roughness and friction. When this ring is disturbed, the pressure on the perimeter of the wafer increases. This may contribute to poor planarization due to a more pronounced oxygen removal rate near the wafer edge.
    Another type of tool head disclosed in US Pat. No. 4,954,142 to Carr et al. Employs a retaining ring with constant pressure at all points on the ring. The pressure on the ring should not be adjusted during polishing in that different springs must be used for some variation in conditions, such as a change in polishing pad surface. Changing the spring requires disassembly of the retaining ring from the head. Thus, there is a need for a toolhead with a retaining ring that is easily adjustable in pressure between the ring and the polishing pad and not likely to change at the polishing pad surface.
    Other problems with the toolhead include undesirable channeling or vibration in some polishing patterns. Channeling or vibration is caused by the toolhead allowing gaps between the toolhead support members in a direction parallel to some degree of backlash or polished wafer.
    The present invention relates to polishing a semiconductor wafer material from which an integrated circuit or the like is made. More specifically, in a chemical mechanical process (CMP), the semiconductor wafer is held by the tool head and polished by contact with the abrasive in a controlled chemical state.
    1 is a schematic perspective view of a conventional CMP system,
    2 is a front perspective view of the polishing apparatus according to the present invention;
    3 is a front perspective view of a tool head, a polishing pad, and a table according to the present invention;
    4 is a block diagram illustrating a control circuit according to a preferred embodiment of the present invention;
    5 is a plan view of a polishing pattern according to the present invention,
    6 is a front perspective view of a polishing apparatus having a knitting arm according to an embodiment of the present invention;
    7a to 7b is a front perspective view of the non-rotating means of the polishing apparatus with an eccentric arm in accordance with the present invention,
    8 is a front perspective view of another embodiment of a polishing apparatus according to the present invention;
    9 is a side view of a tool head according to the present invention;
    10 is a cross-sectional view of a tool head according to another embodiment of the present invention;
    11 is a partial cross-sectional view of the tool head illustrating a portion near the retaining ring in accordance with the embodiment of FIG. 10;
    12 is a partial cross-sectional view of the tool head illustrating a portion near the retaining ring in accordance with the present invention;
    13 is a front perspective view of the tool head illustrating the X and Y axis of rotation in accordance with the present invention;
    14 is a block diagram illustrating a control circuit for controlling a retaining ring in accordance with a preferred embodiment of the present invention;
    15A-15B are side views of a toolhead illustrating diaphragm action in accordance with the present invention, and
    16A-16F are side views of a toolhead illustrating the use of multiple chambers and variable polishing-thickness in accordance with the present invention.
    It is therefore an object of the present invention to provide an apparatus for polishing a wafer while maintaining a uniform relative speed at all points on the wafer relative to the polishing pad.
    It is another object of the present invention to provide an apparatus for polishing a wafer while maintaining a uniform average speed between the wafer and the polishing pad.
    It is another object of the present invention to provide an apparatus for polishing a wafer while providing uniform wear of the polishing pad.
    It is another object of the present invention to provide an apparatus for polishing a wafer while controlling the rotation of the wafer inside the tool head to minimize deformation or breakage of the wafer.
    It is another object of the present invention to provide an apparatus for polishing a wafer by providing a user-selected polishing pattern.
    It is another object of the present invention to provide a more effective toolhead with the ability to reduce bad planarization problems.
    It is another object of the present invention to provide a more effective toolhead that does not allow backlash to prevent undesirable chattering or vibration during polishing.
    To this end, the present invention provides an apparatus for polishing a semiconductor wafer comprising a table having a polishing medium fixedly attached to a surface and movable in a direction parallel to the surface. A controller is provided to provide movement of the table according to a given polishing pattern. This polishing pattern maintains a constant velocity between the wafer and the polishing medium to form a series of arc-shaped paths.
    The wafer is held in place in contact with the polishing pad by a tool head comprising a circular platen and a retaining ring positioned about the outer edge of the platen. The retaining ring is mounted and positioned to resist lateral forces on the wafer caused by the surface contact of the wafer with the polishing surface. An adjustable coupling is mounted to the platen and the ring to adjust the height of the ring relative to the face of the wafer in polishing, as well as to support the position of the retaining ring rigidly in polishing.
    The flexible disk is fixedly mounted between the support post and the platen and positioned parallel to the face of the platen. The flexible disk is adapted to prevent the platen from rotating about the axis of the support post and to transfer the force between the platen and the post in a direction parallel to the face of the platen.
    The cavity is also defined by the platen, wall member and top plate. Posts and pressure regulators are used to introduce gas or liquid into the cavity at positive and negative pressures. The pressure in this cavity causes the polishing to deform, deforming the wafer as required by the user and affecting the polishing properties.
    The following embodiments of the present invention will be described with reference to methods and apparatus for polishing semiconductor wafers, even though those skilled in the art understand that the disclosed methods and structures for broader applications are readily adaptable. For example, the present invention can be easily applied for use in processing other types of disk shaped objects. Whenever the same reference number is repeated in a different figure, this reference refers to the corresponding structure in each figure.
    A method and apparatus for polishing a semiconductor wafer according to the present invention is shown in FIG. The back side of the wafer 200 is held by the tool head 202, while the front side of the wafer 200 is contacted by the polishing pad 206. The tool head 202 is connected to a post 204 capable of moving the tool head 202 and the wafer 200 in the Z direction perpendicular to the plane of the wafer 200 so that the wafer 200 is connected to the polishing pad 206. Allow contact. Post 204 also applies a polishing force in the Z direction on tool head 202 and wafer 200. The Z direction motion and force applied to the tool head 202 is provided by the servo. In an embodiment of the present invention, the servo includes a lead screw 212 that pushes the plate 214 attached to the linear slide 216. Cross member 218 is secured to plate 214 and also to post 204. In accordance with a preferred embodiment of the present invention, the lead screw 212 is driven by an electric motor 213 mounted to the base 229 and computer controlled to allow the user to program the force applied during the polishing process. Those skilled in the art will appreciate that other methods of providing Z direction movement and force may be used.
    The post 204 and the tool head 202 hold the wafer 200 in position in the X and Y directions parallel to the plane of the wafer 200 and perpendicular to each other. In accordance with an embodiment of the present invention, tool head 202 and wafer 200 do not rotate about an axis passing through perpendicular to the center of wafer 200.
    The table 208 is movable in both X and Y directions. According to a preferred embodiment of the present invention, the table 208 is movable in the X direction by the action of the lead screw 220 and the linear slide 222. A similar table 208 is movable in the Y direction by being mounted on the plate 224 mounted on the linear slide 228 and maneuvered by the lead screw 226. Note that linear slide 228 is also mounted to base 229. In a preferred embodiment of the present invention, the lead screws 220, 226 are mounted to the infinitely positionable motors 221, 227 mounted to the plate 224 and the base 229 using brackets 223 and 227, respectively. Driven by. The electric motors 221 and 227 are preferably computer controlled to allow the user to program the table and move it in a number of patterns.
    Although lead screws are used in the preferred embodiment of the present invention, it is natural for those skilled in the art that other servo means, such as rack and pinion servo means, may be used.
    Moving the table 208 in the X and Y directions while holding the wafer 200 and the tool head 202 in the X and Y directions results in relative motion between the wafer 200 and the polishing pad 206. . 3 is an example of the polishing pattern 230 which is a series of tangent sources in this case. This pattern shows the path drawn by the center of the wafer 200 as the polishing pad 206 is moved under the wafer.
    Note that since the wafer 200 does not rotate relative to the polishing pad 206, all points on the wafer exhibit the same relative speed with respect to the polishing pad. Providing a uniform relative velocity for all points on the wafer advantageously provides a more uniform removal rate of material from the wafer as compared to conventional systems in which the wafer rotates.
    In the system according to the invention the user can program the movement of the polishing pad and the table so that the relative speed of the wafer relative to the polishing pad is always constant. Constant speed of the wafer is preferred because it results in a more general material removal rate than the non-constant polishing pattern.
    According to a preferred embodiment of the present invention, the force between the wafer and the polishing pad is controlled by the compression spring (shown in FIG. 9) in the tool head 202. Since the toolhead is movable in the Z direction under computer control, the user can freely program the force exerted between the wafer and the polishing pad to improve slurry or cutting oil distribution and cutting efficiency. For example, the variable force applied during polishing can in some cases improve the polishing result.
    Since the polishing pad 206 is fixedly attached to the table 208, the higher force possible with conventional systems using forward moving polishing tape can be applied between the wafer and the pad. The force of the head lowering on the tape in the Z direction by securing the polishing pad to the table helps to hold this tape in place. Conversely, with the system using a tape-advanced abrasive, the force of the head down on the tape must be overcome to advance the tape. Therefore, with a forward tape system, a lower force must be applied in the Z direction to keep the flat tape surface to prevent tearing. Moreover, with a forward tape system, the abrasive tape is susceptible to elongation, fouling, or deformation under the large forces under operation. These deformations and elongations result in inconsistencies in tape speed resulting in inconsistent relative speeds between the tape and wafer.
    Very precise and constant speed can be advantageously achieved since the system according to the present embodiment uses a polishing pad fixed to a table and this table is moved by an infinitely positionable electric motor with lead screw driving.
    4 is a block diagram schematically illustrating a control circuit according to a preferred embodiment of the present invention. The polishing pattern data memory 330 contains position information of the table 206 in the X and Y directions and position information of the tool head 202 and the post 204 in the Z direction according to a predetermined polishing pattern. This pattern data is received by the X, Y and Z position controllers 332, 334 and 336. This position controller calculates the change in required position using both position data from memory 330 and feedback information from the motor. The change in the position data is sent to the motor drives 338, 340, and 342, which drive the motors 227, 221, and 213 using the stored information. Preferably the position encoder is provided on a motor or the like which sends the position feedback to the position controller. One skilled in the art can select the necessary components for the control circuit from those commercially available.
    If uniform removal of the material is required, care must be taken in programming a particular polishing pattern such that the cutting angle and leading edge of the wafer are sufficiently variable. This cutting angle relates to the direction of relative movement in which points on the wafer are represented relative to the polishing pad. If the cutting angle is not sufficiently variable, the grooves are not cut at the surface of the wafer.
    Similarly, the leading edge of the wafer should be sufficiently variable during the polishing process because the leading edge of the wafer exhibits a high removal rate of material. If the wafer leading edge is not sufficiently variable, non-uniform removal rates from different portions of the wafer may result.
    Thus, in accordance with an embodiment of the present invention, a wafer polishing machine is provided for programming a polishing pattern desired by a user. This user is not limited to a constant polishing pattern, such as constant radial circle advancement, as in conventional systems. With the current system, for example, the user can program the pattern to be a circle with a different radius. Rather than advancing in a straight line, the user can select sinusoidal waveforms, large circles or a combination of arcs, curves or straight lines. The user can also program to move the forward pattern to the FIG. 8 pattern instead of a circle.
    There are numerous advantages to providing a variety of programmable polishing patterns. As described above, the user can program the relative speed of the wafer and the pad to be constant in contrast to conventional systems where the speed varies. The user can also program this pattern to minimize the loss of spinning or rotation of the wafer relative to the toolhead. For example, the user can program a circular polishing pattern in which the direction of rotation is reversed at regular intervals so that the wafer does not spin prominently in one direction on the tool head.
    Another advantage of providing a variety of optional polishing patterns is that certain techniques for the surface of the wafer can be better planarized by selecting a more optimal polishing pattern.
    Another advantage of providing a variety of optional polishing patterns is the ability to utilize regions of polishing pads with more aggressive abrasives. The user can program the pattern so that selected portions of the wafer are polished by more aggressive polishing zones to increase the removal rate from these portions. Similarly, if either area of the polishing pad is degraded in polishing performance, the user can program the polishing pattern to uniformly avoid the degraded polishing area to obtain a constant removal rate.
    Another advantage of the system is that the user can program the polishing pattern to selectively remove more material from the edges of the wafer by programming the polishing pattern so that these edges are read more often in the polishing pattern.
    Another advantage is that the polishing pattern can be programmed so that uniform wear of the polishing pad is achieved. According to a preferred embodiment a uniform polishing pad is obtained by polishing in a pattern of continuous arcs which together form a series of tangent circles.
    5 illustrates an example of one continuous arc polishing pattern. The illustrated continuous arc pattern consists of a series of arcs drawn by the center of the polished wafer to draw a series of tangent circles. Paths 1 through 5 are shown with different lines so that the leader more easily follows the wafer path on the polishing pad.
    The continuous arc pattern shown in FIG. 5 has been found to provide extremely good polishing results for various reasons. Pad wear is uniform because the wafer covers large areas in a uniform manner before repeating this pattern. The cutting angle and leading edge of the wafer are continuously varied because the wafer continues the arc motion. Uniform velocity is obtained at all points because the wafer does not rotate. The constant speed keeps the polishing pattern entirely so that a more uniform removal rate of the material is obtained. Finally, the spinning of the wafer against the tool head caused by continuous circular motion in one direction is minimized because the arcs in this pattern are converted clockwise and counterclockwise.
    6 shows another embodiment of the present invention. In this change the tool head 202 is connected to the cross member 218 by an eccentric arm 232. The eccentric arm 232 is rotatable about an axis A concentric with the top of the eccentric arm 232 such that the tool head 202 is moved in a circular path. As in the previous embodiment, the polishing pad 206 and the table 208 are movable in the X and Y directions by the lead screws 220 and 226, and the movement and force acting in the Z direction is applied to the lead screw 212. Note that it is provided by.
    In accordance with an embodiment of the present invention, the rotation of the eccentric arm 232 is computer controlled to allow the user to precisely control the rotation speed. By rotating the eccentric arm 232, the tool head 202 and the wafer 200 are moved in a circular path about the axis A. As shown in FIG. The table 208 is also moved in the X and Y directions, and the resulting polishing pattern is a forward pattern. Unlike conventional systems that provide only straight forward sources, embodiments of the present invention provide a user with an unrestricted forward pattern. Also, the circular pattern can be made to advance into a large circle or sinusoidal pattern.
    Preferably, the tool head 202 does not rotate about its own central axis B. Instead, the tool head 202 and the wafer 200 move in a circular path about the axis A. FIG. This movement without rotation results in a uniform relative velocity obtained at all points of the wafer. 7A-7B illustrate two alternative embodiments of tool head 202 and eccentric arm 232 that include a structure that ensures that tool head 202 does not rotate along a circular path.
    The structure shown in FIG. 7A uses pulleys and belt systems to ensure non-rotation. Movement along the circular path is provided by a rotating vertical post 236 which rotates inside the non-rotating fixed vertical post 234 and protrudes as shown. The eccentric cross member 238 is connected to the rotating vertical post 236 and the spindle 240. The fixed pulley 242 is fixed to the fixed vertical post 234. Belt 243 is coupled to both fixed pulley 242 and head pulley 244. In turn the head pulley 244 is secured to the head post 246 supported by the spindle through the spindle 240 and fixed to the tool head 202.
    In operation, the rotational vertical post 236 spins to cause the eccentric arm 238, the spindle 240, the head post 246 and the tool head 202 to move in a circular path. The engagement between the stationary pulley 242, the belt 243 and the head pulley 244 causes the toolhead 202 to translate rather than rotate as it moves through the circular path.
    7B illustrates another embodiment of an eccentric arm 232 that uses a series of gears to ensure non-rotation of the tool head 202.
    As shown, the fixed vertical post 234, the rotating vertical post 236 and the eccentric cross member 238 are provided in a form similar to the previous embodiment. In this embodiment, the fixed gear 248 is fixed to the fixed vertical post 234, and in order to mesh with the intermediate gear 250 to engage the head gear 252. The headgear 252 is fixed to the head post 246. In operation, the eccentric cross member 238 rotates about the axis of rotation A, while the series of gears 248, 250, 252 move the stationary post 246 as they move in a circular motion about the axis A. FIG. The tool head 202 also does not rotate but rather translates. One skilled in the art can select the appropriate gear or pulley based on the length of arm 232 to accomplish the performance as described herein.
    If a constant, non-variable speed between the wafer and the polishing pad is desired, the rotational speed of the eccentric arm 232 can be programmed accordingly. In order to compensate for the relative movement in the X and Y directions of the table 208, the rotational speed of the eccentric arm 232 can be programmed to keep the linear speed between the wafer and the polishing pad constant. Preferably the eccentric arm should rotate faster when the head movement has a component in the same direction as the table and slower when the head movement has a component opposite in direction to the table movement component.
    8 is a perspective view of another modified embodiment according to the present invention. In this embodiment, the polishing pad 206 is mounted to the table 208 'to move in the Y direction by the action of the linear slide 228' and the lead screw 226 '. Wafer 200 is held by head 202 mounted on eccentric arm 232. The eccentric arm 232 is rotatably mounted to the cross subsection 218 fixed to the plate 214. Under the action of the lead screw 212, the plate 214 moves in the Z direction. In this embodiment the linear slide 216 is slidably mounted to the plate 318 fixedly mounted to the plate 320. The plate 320 moves in the X direction under the action of the lead screw 220 'and the linear slide 222'. Thus, in this embodiment, the head 202, arm 232 and cross member 218 move both in the X and Z directions while the table 208 'moves in the Y direction. Those skilled in the art will appreciate that other embodiments are possible. For example, the table is fixed in the X and Y directions while the head moves in the X and Y directions.
    9 is a side view of a toolhead 202 in accordance with one embodiment of the present invention. As shown, the post 204 is coupled to the shoulder 260 to provide movement and force in the Z direction. The shoulder 260 is a rigid cylindrical piece and has a cylindrical guide ball socket 262 that is centered with the guide ball 264. The guide ball 264 is fixed to the platen 266 with a bolt or the like. As shown, wafer 200 is contacted by the underside of platen 266. Retaining ribs 273 protrude below the surface of platen 266 and contact the edge of the wafer to center the wafer on the platen. Guide ball 264 and guide ball socket 262 provide precise positioning of platen 266 and shoulder 260 in the X and Y directions. Preferably, the guide ball 264 fits tightly into the guide ball socket 262 to allow the guide ball 264 to move about .0002 inches or less in the X and Y directions.
    The shoulder 260 also has a circular notch 268 into which a compression spring 270 acting between the shoulder 260 and the platen 266 fits. In a preferred embodiment the spring 270 consists of a dummy circular belle spring on the platen 266. Spring 270 causes platen 266 to be pressed against the wafer and table such that the force in the Z direction and the pressure on the wafer are variable. Thus, by varying the positions of the shoulder 260 and the post 204 in the Z direction, the pressure between the wafer 200 and the polishing pad can be precisely controlled.
    Also shown in FIG. 9 is a bend ring 272, preferably a thin circular steel ring, which is platen 266 using an annular clamp ring 269 fastened to each of the ridge 267 and the shoulder 260. Is mounted to both the periphery of the branch portion 267 and the shoulder 260. The bending ring 272 transmits the cutting force and torque in the X and Y directions between the shoulder 260 and the platen 266. The bend ring 272 also allows relative movement in the Z direction to allow force to be transferred to the wafer and allow the platen 266 to pivot slightly in the Z direction relative to the guide ball 264 as shown, thereby providing pad angles. Let's follow some changes in. However, the flex ring 272 does not allow rotation about the Z axis. Advantageously, the bend ring 272 and guide ball 264 prevent the platen 266 from moving in the X and Y directions, causing any backlash that may cause undesirable chattering or vibration when using any polishing pattern. Do not have to.
    10 is a cross-sectional view of a tool head according to another embodiment of the present invention. Wafer 200 is shown to be held by toolhead 202. The backside of the wafer is preferably made of elastomeric material and is contacted by the elastic pad 298 acting as a spring between the flexible platen 277 and the wafer 200 and compressible under force in the Z direction. The flexible platen 277 is composed of a thick wall portion 276 and a thin surface portion 279. The platen 277 is preferably made of a metal material such as steel. The wall portion of the platen 277 is attached to the top plate 274 and the cavity 279 is formed by the wall and face of the platen 277 and the top plate 274. Cavity 278 may be filled with gas or liquid to exert a positive or negative pressure on the face of platen 277 acting as a diaphragm. Port 280 is provided to supply or discharge gas or liquid from cavity 278. According to a preferred embodiment an electronic computer controlled pressure regulator 281 is provided such that the pressure in the cavity 278 is programmed and precisely controlled. By controlling the amount of fluid or gas in the cavity 278, the face of the platen 277 can be bent to be concave or convex, advantageously changing the shape of the wafer 200 during polishing.
    FIG. 11 is a partial cross-sectional view of a toolhead illustrating the edge vicinity of the wafer according to the embodiment described with respect to FIG. 10. As shown, the wafer 200 includes a wear ring 291 and is wrapped around the wafer 200 and held in place by the retaining ring 282. Retaining ring 282 and plastic wear ring 291 have curved outer edges that assist in flattening the polishing pad during polishing, which advantageously results in more uniform material removal from the wafer. Preferably, the wear ring 291 is made of a plastic material having both high polishing resistance against polishing by the polishing pad and good size stability to resist paper. The retaining ring 282 is fixedly attached to the top plate 274 by the retaining ring bending member 284. The retaining ring flexure member 284 consists of a flat circular steel band and is fixed to the top plate 274 with a clamp ring 275 fastened to the top plate 274 (shown in FIG. 10). The bending member 284 allows the retaining ring 282 to move in a vertical direction perpendicular to the plane of the wafer 200. The exact vertical position of the retaining ring 282 is controlled by many servo-operated screws 288 and sensors 290 spaced along the circumference of the tool head. Sensor 290 measures the vertical height of retaining ring 282 relative to top plate 274 and sends this information to the computer controller. The computer also controls a servo operated screw 288 that sets the vertical position of the retaining ring 282 in operation.
    While the vertical position of the retaining ring 282 is adjustable, the screw 288 and flexure member 284 hold the ring firmly in place, hindered by changes in the processing material, such as waveforms, at the polishing pad 206. Do not receive. Retaining ring 282 mitigates these changes resulting in a more practical and stable polishing process.
    The table mounting sensor 292 is provided to measure the relative position of the wafer 200 and the wear ring 291 during polishing. The table-mounted sensor 292 is a measuring pin 286, rubber diaphragm 293, sensor cavity 294, gas port 295, transducer 296, liquid port 297 and sensor housing 301 It is composed. The measuring pin 286 has a rounded top that projects above the surface of the table 208 and into the area of the polishing pad 206. As the retaining ring 282 and the wafer 200 pass over the table mounting sensor 292, the measuring pins 286 are pressed together downwards in contact with each other. The measuring pin 286 is movably connected to the transducer 296 by a spiral shaft 299. Transducer 296 is a linear voltage displacement transducer that transforms the linear motion of shaft 299 into a voltage analog signal.
    The sensor cavity 294 is formed by the wall of the sensor housing 301, the transducer, the measuring pin and the rubber diaphragm. Gas port 295 provides a means for controlling the gas pressure in sensor cavity 294. Positive pressure in the cavity 294 causes pressure to act on the rubber diaphragm 293, causing the diaphragm to push the measuring pin 286 upwards. Thus, the upward spring force and vertical position on the measuring pin 286 can be controlled by the pressure of the gas in the sensor cavity. The rubber diaphragm 293 also serves to seal the sensor cavity 294 from the liquid on the surface of the table 208. Liquid, such as water, is pumped through the liquid port 297 through the passageway and into the area above the rubber diaphragm. In operation, the liquid from port 297 is at the same level as this upper region to maintain the region free of abrasive slurries.
    Referring now to FIG. 12, a closed cross section of the region near the retaining ring may include a wear ring 291, a flexible platen 277, an elastic pad 298, a wafer 200, a polishing pad 206 and a table 208. Is shown to include. Note that the flexure member 284 and other structures are not shown. Also shown is a height relationship H with a difference in the vertical direction between the wafer 200 and the wear ring 291. The height relationship H during polishing is an important parameter in ensuring the removal of fair material. Small changes in this relationship can have a measurable effect on uniformity. Even normal variations in wafer thickness can result in process flatness that is difficult to control even without compensation.
    As described above, the vertical position of the retaining ring 282 is precisely controlled by manual or servo operated screws. By controlling the height of the retaining ring 282 according to the measurement taken by the ring position sensor 290 and the table mounting sensor 292, the height relationship H is sufficiently adjustable. Advantageously, the table mount sensor 292 can detect the relative height of the wafer 200 and the retaining ring 282 during or before polishing. By measuring the relative position of the ring and wafer under load, factors such as the compression amount of the elastic pad 298 and the polishing pad 206 are taken into account.
    Making the relationship H between the wafer 200 and the height of the retaining ring 282 adjustable allows to advantageously allow control over the dispensing force applied between the wafer 200 and the wear ring 291. . For example, by increasing the height relationship H, the more force acting on the wafer 200 in the Z direction, the smaller force will act on the wear ring 291. Note that the elastic pad 298 acts as a spring when the force is applied. By adjusting the height relationship H, the compression of the elastic pad 298 is changed to sequentially change the pressure distribution between the wafer and the retaining ring.
    According to a preferred embodiment of the invention the retaining ring 282 is also slightly rotatable about an axis parallel to the plane of the wafer. This slight rotation is illustrated in FIG. 13, which is a schematic of the wafer 200 and retaining ring 282, not shown in scale. FIG. 13 illustrates the relative rotational movement of the retaining ring 282 about two axes X and Y, both of which are parallel to the wafer 200. For purposes of illustration, the relative position of the retaining ring 282 is enlarged. In an embodiment of the present invention, the servo operated screw 288 (shown in FIG. 11) is adjusted to position the retaining ring 282 when desired. The bending member 284 causes the retaining ring 282 to rotate slightly about the axes X and Y to translate vertically in the Z direction.
    14 is a block diagram illustrating a control circuit used to control a retaining ring in accordance with a preferred embodiment of the present invention. The controller 350 correlates readings from the ring position sensor 290 with respect to the rotation of the ring about the X and Y axes and the deviation in the Z direction. Controller 350 compares the desired retaining ring position from memory 330 with the reading from the ring position sensor to determine which position change is required. The controller 350 then sends control information reflecting the necessary adjustments to the driver 352 for driving the servo-operated screw 288. In this case, the vertical position of the ring as well as the rotational position of the ring about the X and Y axes are precisely controlled to be fully programmable. One skilled in the art can select the necessary elements for the control circuit described above from those currently commercially available.
    By maintaining precise control of the position of the retaining ring, the present invention provides the advantage of enabling fine pressure distribution on the wafer to achieve more uniform removal rates and surface finish on the wafer.
    Referring now to FIGS. 15A-15B, a more detailed description will be given of using the cavity 278 to change the appearance of the wafer 200. The outlines shown in FIGS. 15A-15B are enlarged to illustrate relative shapes. As described above, gas or fluid may be supplied via port 280, which is preferably under the control of a computer controlled electronic pressure regulator. When pressure is created in the cavity 278 as shown in FIG. 15A, the flexible platen 277 is pressed into the convex portion as shown, where the center portion of the wafer 200 is lower than the edge portion. Conversely, FIG. 15B illustrates a concave contour caused by vacuum or low pressure in cavity 278. By varying the pressure in the cavity 278 using the port 280 and pressure regulator, the contours of the platen 277 and the wafer 200 can be advantageously programmed to range from high convex to high concave.
    Several embodiments of platens 277 and top plate 274 are shown schematically in FIGS. 16A-16F to allow for different appearances. The thickness of flexible platen 277 in FIGS. 16A-16D is varied to vary the appearance. Typically, the thickness of the platen 277 exhibits a lower curvature than the thinner portion under the same pressure. 16A and 16B, platen 277 consists of a thick central portion 306. FIG. 16A shows a flat contour due to critical pressure in cavity 278, while FIG. 16B shows a convex contour due to high pressure in cavity 278. As shown in FIG. 16B, as a result of the thick central portion 306, the central portion of the platen 277 has a relatively small curvature compared to the area farther from the central portion with a larger curvature.
    As shown in FIGS. 16C-16D, the platen 277 consists of a thick portion 308 that is ring shaped. FIG. 16C shows the flat contour due to the critical pressure in the cavity 278, while FIG. 16D shows the low curvature zone near the thick portion 308 and the high curvature zone in other regions as a result of the high pressure. Doing.
    An alternative embodiment is shown in FIGS. 16E-16F, wherein cavity 278 is divided into multiple chambers. The tool head 202 is composed of a central chamber 310 and the circumferential chamber 312. Each chamber has a separate port, i.e., ports 314 and 316, which are separately compressed or emptied with fluid or gas. Shown in FIG. 16F is the appearance resulting from the vacuum in the central chamber 310 and the high pressure in the peripheral chamber 312. In this state, the central portion of the platen 277 is concave and the outer portion is convex. Those skilled in the art will appreciate that other contour patterns are possible using different relative pressures in the chambers or in different chambers. For example, flexible platen 277 may be convex when there is no pressure in cavity 278 and less convex when vacuum in cavity 278.
    Thus, by providing a platen with a non-uniform thickness or by providing a plurality of cavities or chambers in accordance with the present invention, the user can advantageously change the contour of the polished wafer and the removal rate can be advantageously controlled more precisely. Can be.
    Although the two features described above, namely the operation and control of the retaining ring 282 and the operation and control of the deformable platen 277 and the cavity 278, have been described in relation to each other, one of ordinary skill in the art will appreciate It recognizes that it can run independently. In other words, the adjustable retaining ring will operate with a conventional platen and the deformable platen will operate with a conventional retaining ring.
    The above-described embodiments of the present invention illustrate only the principles of the present invention and are not intended to limit the present invention to the embodiments described herein. In view of this disclosure, those skilled in the art can use this invention in a wide range of fields. For example, those skilled in the art will recognize that the present invention can be used to polish other disc shaped objects.
    权利要求:
    Claims (45)
    [1" claim-type="Currently amended] In the wafer polishing apparatus,
    A table forming a planar polishing surface adapted to contain a polishing medium;
    A head assembly adapted to hold a wafer relative to a polishing surface, the head assembly comprising means for holding the wafer to prevent rotation of the wafer about an axis perpendicular to and penetrating the wafer; And
    And means for providing relative movement between the wafer and the polishing surface in any direction within the polishing surface.
    [2" claim-type="Currently amended] The apparatus of claim 1 wherein the table is movable in any direction within the plane of the polishing surface.
    [3" claim-type="Currently amended] 3. The apparatus of claim 2, wherein the means for providing relative movement comprises: a first slide mechanism coupled to the table to move the table in a first direction in a plane of the polishing surface, and a first in plane of the polishing surface. And a second slide mechanism coupled to the table to move the table in a second direction perpendicular to the direction.
    [4" claim-type="Currently amended] 4. The apparatus of claim 3, wherein the first and second slide mechanisms are each comprised of linear slides coupled to a leadscrew rotatably driven by a motor.
    [5" claim-type="Currently amended] 5. The apparatus of claim 4, further comprising a controller in communication with the first and second slide mechanisms, wherein the controller controls movement of the first and second slide mechanisms in accordance with a predetermined polishing pattern.
    [6" claim-type="Currently amended] The device of claim 1, wherein the head assembly is movable in a direction along the first axis in a plane parallel to the plane of the polishing surface.
    [7" claim-type="Currently amended] 7. The apparatus of claim 6, wherein said means for providing relative movement consists of at least one slide mechanism coupled to the head assembly to move the head assembly in a direction along the first axis.
    [8" claim-type="Currently amended] 8. The apparatus of claim 7, further comprising a controller in communication with said at least one slide mechanism, said controller controlling movement of said at least one slide mechanism in accordance with a predetermined polishing pattern.
    [9" claim-type="Currently amended] 2. The apparatus of claim 1, wherein said means for holding a wafer is comprised of a non-rotating head assembly.
    [10" claim-type="Currently amended] The apparatus of claim 1, wherein the head assembly is comprised of an eccentric arm that moves the wafer in a circular path.
    [11" claim-type="Currently amended] 11. The device of claim 10, wherein the means for holding a wafer comprises one or more pulleys mounted on the eccentric arm and coupled to a belt to prevent rotation of the wafer about an axis perpendicular to the wafer and through the wafer. Device characterized in that.
    [12" claim-type="Currently amended] 11. The device of claim 10, wherein the means for holding a wafer comprises a plurality of gears mounted on the eccentric arm, the gears being coupled to each other to effect rotation of the wafer about an axis perpendicular to the wafer and penetrating the wafer. Preventing the device.
    [13" claim-type="Currently amended] The method of claim 1, wherein the head assembly,
    A post member;
    A platen having a face sized and positioned to contact the face of the wafer during polishing; And
    A flexible disk fixedly mounted between the post member and the platen, the predetermined disc being platen relative to the post while transmitting a torsional force between the platen and the post member to prevent rotation, such as between the platen and the post member. And said flexible disk further permits vertical movement.
    [14" claim-type="Currently amended] 14. The head assembly of claim 13, wherein the head assembly is shaped to exert a force on the platen in a direction perpendicular to the face of the platen in response to movement by the post member in a vertical direction of the platen. And a spring assembly mounted between the platens.
    [15" claim-type="Currently amended] The method of claim 1, wherein the assembly,
    A circular platen having a face adapted to be in contact with the wafer; And
    And a ring mounted on the platen circumferentially with respect to the outer edge of the platen, the device further comprising the ring mounted and positioned to resist forces on the wafer in a direction parallel to the face of the wafer.
    [16" claim-type="Currently amended] 16. The head assembly of claim 15, wherein the head assembly is adapted to adjustably position at least one of the height and angular inclination of the ring relative to the face of the wafer and to rigidly support the polishing of the position of the retaining ring. And an adjustable coupling mounted between the ring and the platen.
    [17" claim-type="Currently amended] 2. A deformable plate according to claim 1, wherein said head assembly is comprised of a fluid sealing cavity, said cavity being a top plate member, at least one wall member mounted to and enclosing said cavity, and a deformable plate mounted to said wall member facing the top plate. And is defined by the platen having a face facing the cavity to contact the face of the wafer, where the cavity is selectively compressed or emptied to deform the face of the platen into a non-planar shape. Device which can be.
    [18" claim-type="Currently amended] 18. The apparatus of claim 17, further comprising a membrane member defining a second cavity with the top plate member and the deformable platen.
    [19" claim-type="Currently amended] 18. The apparatus of claim 17, wherein the thickness of the deformable platen is variable.
    [20" claim-type="Currently amended] In the apparatus for polishing the surface of the semiconductor wafer,
    A base member;
    A table having an upper surface, said table movably mounted to said base member;
    A polishing medium fixedly attached to a surface of the table;
    A table moving mechanism for moving the table in a direction parallel to the surface of the table;
    A controller in communication with said table moving mechanism, said controller controlling movement of said table in accordance with a predetermined polishing pattern consisting of a continuous series of arcs;
    A circular platen having a face adapted to contact the wafer during polishing, the round platen having the face oriented parallel to the surface of the table;
    A ring mounted on the platen circumferentially with respect to an outer edge of the platen, the ring mounted and positioned to resist lateral forces on the wafer caused by engaging the polishing surface with the face of the wafer;
    An adjustable coupling mounted to the platen and the ring, the coupling adapted to controllably position the height of the ring relative to the face of the wafer and to rigidly support the polishing of the position of the retaining ring;
    A post member movably attached to a platen and to the base member, the post member having an axis perpendicular to the face of the platen; And
    A flexible disk fixedly mounted to the post member and to the platen, positioned parallel to the face of the platen, to prevent rotation of the platen about the axis of the post member and of the platen And said flexible disk adapted to transfer forces between the platen and the post member in a direction parallel to said face.
    [21" claim-type="Currently amended] 21. The table moving mechanism of claim 20, wherein the table moving mechanism is adapted to move the table in a first direction parallel to the surface of the table, and parallel to the surface of the table and perpendicular to the first direction. And a second slide mechanism adapted to move the table in a second direction.
    [22" claim-type="Currently amended] 22. The apparatus of claim 21, wherein the first and second slide mechanisms are each comprised of linear slides coupled to a leadscrew rotatably driven by a motor.
    [23" claim-type="Currently amended] 22. The apparatus of claim 21, further comprising a controller in communication with the first and second slide mechanisms, wherein the controller controls movement of the first and second slide mechanisms in accordance with a predetermined polishing pattern.
    [24" claim-type="Currently amended] 24. The apparatus of claim 23, wherein the predetermined polishing pattern maintains a constant relative speed between the surface of the table and the surface of the wafer.
    [25" claim-type="Currently amended] 24. The apparatus of claim 23, wherein the predetermined polishing pattern consists of a series of arcs.
    [26" claim-type="Currently amended] 24. The apparatus of claim 23, wherein the predetermined polishing pattern consists of a continuous arc polishing pattern.
    [27" claim-type="Currently amended] In the method of polishing a wafer,
    Maintaining the wafer in the head assembly such that the wafer is contacted by the polishing medium;
    Moving at least one of the head assembly and the polishing medium relative to the other in accordance with a predetermined polishing pattern to maintain a constant relative speed between the polishing medium and all points on the wafer.
    [28" claim-type="Currently amended] 28. The method of claim 27, wherein the moving step further comprises moving the head assembly in accordance with a predetermined polishing pattern.
    [29" claim-type="Currently amended] 29. The method of claim 28, wherein said moving step further comprises moving the head assembly and the wafer with a continuous series of arcs along a predetermined polishing pattern.
    [30" claim-type="Currently amended] 30. The method of claim 29, wherein said moving step further comprises following a pattern forming a series of tangent circles.
    [31" claim-type="Currently amended] 28. The method of claim 27, wherein said moving step comprises moving the polishing medium along a predetermined path.
    [32" claim-type="Currently amended] 32. The method of claim 31, wherein the moving step comprises moving the polishing medium into a continuous series of arcs in accordance with a predetermined polishing pattern.
    [33" claim-type="Currently amended] A head for positioning a wafer during polishing by engaging a surface of the wafer with the polishing surface,
    A platen having a face adapted to be in contact with the wafer;
    A ring mounted on the platen circumferentially with respect to the outer edge of the platen, the ring mounted and positioned to resist lateral forces on the wafer caused by engaging the polishing surface with the face of the wafer; And
    And an adjustable coupling mounted between the ring and the platen, which is adapted for adjustable positioning of the ring relative to the face of the wafer and for rigid support in polishing the position of the retaining ring. Head.
    [34" claim-type="Currently amended] 34. The apparatus of claim 33, further comprising: a post member movably attached to the platen having an axis perpendicular to the face of the platen; And
    A flexible disk fixedly mounted to the post member and to the platen, positioned parallel to the face of the platen, to prevent rotation of the platen about the axis of the post member and of the platen And the flexible disk adapted to transfer force between the platen and the post member in a direction parallel to the face.
    [35" claim-type="Currently amended] 34. The head of claim 33, wherein the adjustable coupling consists of a rotatable screw to adjust the height of the ring and a motor to rotate the screw.
    [36" claim-type="Currently amended] 36. The apparatus of claim 35, wherein the adjustable coupling is a means for monitoring the height of the ring relative to the face of the wafer, and a controller in communication with the monitoring means, wherein the motor is adapted to respond to the monitored height of the ring in accordance with a predetermined height. The head, characterized in that further configured with the controller for controlling.
    [37" claim-type="Currently amended] A head for positioning a wafer during chemical mechanical polishing of the head,
    It consists of a fluid sealing cavity, which is
    Upper plate member;
    At least one wall member mounted to the top plate and surrounding the cavity; And
    A deformable platen mounted on the wall member opposite the top plate member, the deformable platen being partitioned by the platen having a face facing the cavity for contacting the face of the wafer,
    Wherein the cavity can alternatively be pressed or emptied to deform the face of the platen to a non-planar shape.
    [38" claim-type="Currently amended] 38. The device of claim 37, further comprising: a port fluidly connected to the cavity positioned and shaped to allow introduction and discharge of gas or fluid from the cavity; And
    And a pressure regulator fluidly connected to the port and shaped to monitor and control the pressure in the cavity.
    [39" claim-type="Currently amended] 38. The head of claim 37, wherein the cavity is filled with a fluid.
    [40" claim-type="Currently amended] 38. The head of claim 37, wherein the cavity is filled with gas.
    [41" claim-type="Currently amended] 38. The head of claim 37, further comprising a membrane member partitioning a second cavity with the top plate member and the deformable platen.
    [42" claim-type="Currently amended] 38. The head of claim 37, wherein the thickness of the deformable platen is variable.
    [43" claim-type="Currently amended] An apparatus for polishing a wafer,
    Table with top surface;
    A medium fixedly attached to the face of the table;
    A circular platen adapted to be in contact with the back side of the wafer and having a surface oriented parallel to the top surface of the table;
    A ring mounted to the platen and circumferentially positioned about an outer edge of the platen, the ring having a bottom surface adapted to contact the medium; And
    A sensor mounted to the table having a protruding member protruding above the table, the sensor sized and shaped to measure a distance in a direction perpendicular to the top surface of the table between a front surface of the wafer and a bottom surface of the ring; Device, characterized in that configured.
    [44" claim-type="Currently amended] An apparatus for polishing a semiconductor wafer,
    Table with top surface;
    A polishing medium attached to the face of the table;
    A circular platen adapted to be in contact with the wafer during polishing and having a face oriented parallel to the face of the table;
    A post member movably attached to a platen, the post member having an axis perpendicular to the face of the platen; And
    A flexible disk fixedly mounted to the post member and to the platen, positioned parallel to the face of the platen, to prevent rotation of the platen about the axis of the post member and to the face of the platen. And said flexible disk sized to transfer force between said post member and said platen in a parallel direction.
    [45" claim-type="Currently amended] 45. An axis according to claim 44, further comprising a guide ball movably connected to said post member and fixedly mounted to said platen, said guide ball being parallel to the force of said platen and penetrating the center of said guide ball. And position the platen to incline with respect to the post.
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    同族专利:
    公开号 | 公开日
    AU5796396A|1996-11-29|
    US5759918A|1998-06-02|
    WO1996036459A1|1996-11-21|
    US5851136A|1998-12-22|
    JPH11505181A|1999-05-18|
    TW338015B|1998-08-11|
    US5908530A|1999-06-01|
    US5938884A|1999-08-17|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    1995-05-18|Priority to US8/443,956
    1995-05-18|Priority to US08/443,956
    1996-05-17|Application filed by 라인 브루스, 익스클루시브디자인컴파니인코퍼레이티드
    1999-02-25|Publication of KR19990014896A
    优先权:
    申请号 | 申请日 | 专利标题
    US8/443,956|1995-05-18|
    US08/443,956|US5908530A|1995-05-18|1995-05-18|Apparatus for chemical mechanical polishing|
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